Grant for nanostructures research
The Centre for Nanoscience and Nanotechnology, Bharathidasan University, Tiruchi, has received a Rs. 2.15-crore grant from the Department of Science and Technology – Nanomission, Government of India, to carry out research on self-assembled one-dimensional wide band-gap semiconductor nanostructures for energy-efficient light emitting diodes and future nanotechnological applications.
Centre coordinator K. Jeganathan, who has spent several years in Japan and Germany studying semiconductor nanostructures, will lead the team of researchers to fabricate one-dimensional Gallium Nitride (GaN) nanostructures by chemical vapour deposition and set up essential characterisation facilities such as Field Emission Scanning Electron Microscope and Low Temperature Photoluminescence.
GaN-based semiconductor materials are currently used for the fabrication of high brightness light emitting diodes (LEDs) in visible region, particularly Violet, Blue and Green.
LEDs are being successfully used in display applications; the high efficient solid state white lighting emerges by down conversion of phosphor on ultra violet emission, Dr. Jeganathan explained. One-dimensional nanostructures represent the smallest dimension structure that can efficiently transport electrical carriers and can play an important role as both interconnect and functional device elements in integrated nanosystem.
Semiconducting nanowires, he said, were the building blocks of future nanoscale devices in nanoelectronics, spintronics, optoelectronics and nanobiosensor. “Our team is highly excited to explore nanowire-based LEDs having high luminous, long life, and low power consumption characteristics, due to large surface to volume ratio, high extraction efficiency and confinement of charge carriers in nanoscale,” said Dr. Jeganathan, who has also received a grant of Rs. 40 lakh from the Department of Science and Technology for the fabrication of organic light emitting devices having high commercial potential.
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